LE PRONOSTIC ET LE TRAITEMENT DU PURPURA THROMBOCYTOPENIQUE IDIOPATHIQUE DE L'ENFANTALEXANDER M; VAN DEN BOGAERT N; FONDU P et al.1976; ARCH. FR. PEDIATR.; FR.; DA. 1976; VOL. 33; NO 4; PP. 329-345; ABS. ANGL.; BIBL. 1 P. 1/2Article

Dynamic global simulation of the Czochralski process. I. Principles of the methodVAN DEN BOGAERT, N; DUPRET, F.Journal of crystal growth. 1997, Vol 171, Num 1-2, pp 65-76, issn 0022-0248Article

Dynamic global simulation of the Czochralski process. II. Analysis of the growth of a germanium crystalVAN DEN BOGAERT, N; DUPRET, F.Journal of crystal growth. 1997, Vol 171, Num 1-2, pp 77-93, issn 0022-0248Article

Simulation of back-melting in Czochralski growthVAN DEN BOGAERT, N; DUPRET, F.Journal of crystal growth. 1996, Vol 166, Num 1-4, pp 446-451, issn 0022-0248Conference Paper

Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convectionASSAKER, R; VAN DEN BOGAERT, N; DUPRET, F et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 450-460, issn 0022-0248Conference Paper

The use of a reduced model for on-line simulations of the Czochralski growth of single crystalsOLIVARI, E; JACMIN, P; VAN DEN BOGAERT, N et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 627-637, issn 0022-0248Conference Paper

Modelling in crystal growthDUPRET, F; DERBY, J. J; KAKIMOTO, K et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, issn 0022-0248, 407 p.Conference Proceedings

Transient computer simulation of a CZ crystal growth processDORNBERGER, E; VON AMMON, W; VAN DEN BOGAERT, N et al.Journal of crystal growth. 1996, Vol 166, Num 1-4, pp 452-457, issn 0022-0248Conference Paper

Mathematical modeling of grown-in defects formation in Czochralski siliconKOBAYASHI, S.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 334-342, issn 0022-0248Conference Paper

A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilationGONDET, S; DUFFAR, T; LOUCHET, F et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 92-101, issn 0022-0248, 10 p.Article

Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the V/G criterionVAN GOETHEM, N; DE POTTER, A; VAN DEN BOGAERT, N et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 320-324, issn 0022-3697, 5 p.Conference Paper

A review of measurement of thermophysical properties of silicon meltKIMURA, S; TERASHIMA, K.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 323-333, issn 0022-0248Conference Paper

Thermal stress simulation and interface destabilisation in indium phosphide grown by LEC processGONDET, S; DUFFAR, T; JACOB, G et al.Journal of crystal growth. 1999, Vol 198-99, pp 129-134, issn 0022-0248, 1Conference Paper

Analysis of the dopant segregation effects at the floating zone growth of large silicon crystalsMÜHLBAUER, A; MUIZNIEKS, A; VIRBULIS, J et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 372-380, issn 0022-0248Conference Paper

Experiments on the oscillatory convection of low Prandtl number liquid in Czochralski configuration for crystal growth with cusp magnetic fieldLEE, Y.-S; CHUN, C.-H.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 477-486, issn 0022-0248Conference Paper

Theoretical model of crystal growth shaping processTATARCHENKO, V. A; USPENSKI, V. S; TATARCHENKO, E. V et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 615-626, issn 0022-0248Conference Paper

Vibrational control of crystal growth from liquid phaseLYUBIMOV, D. V; LYUBIMOVA, T. P; MERADJI, S et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 648-659, issn 0022-0248Conference Paper

Use of an inhomogeneous magnetic field for silicon crystal growthKAKIMOTO, K; EGUCHI, M; OZOE, H et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 442-449, issn 0022-0248Conference Paper

Validation of strong magnetic field asymptotic models for dopant transport during semiconductor crystal growthMA, N; WALKER, J. S.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 401-409, issn 0022-0248Conference Paper

A numerical study of convection during THM growth of CdTe with ACRTBARZ, R. U; SABHAPATHY, P; SALCUDEAN, M et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 566-577, issn 0022-0248Conference Paper

Detailed modeling of three-dimensional chemical vapor depositionERN, A; GIOVANGIGLI, V; SMOOKE, M. D et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 670-679, issn 0022-0248Conference Paper

Measurement, modelling and simulation of defects in as-grown Czochralski siliconVANHELLEMONT, J; SENKADER, S; KISSINGER, G et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 353-362, issn 0022-0248Conference Paper

Modelling of the isothermal melt flow due to rotating magnetic fields in crystal growthBARZ, R. U; GERBETH, G; WUNDERWALD, U et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 410-421, issn 0022-0248Conference Paper

Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convectionFAINBERG, J; LEISTER, H.-J; MÜLLER, G et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 517-523, issn 0022-0248Conference Paper

Time-dependent simulation of Czochralski silicon crystal growthJÄRVINEN, J; NIEMINEN, R; TIIHONEN, T et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 468-476, issn 0022-0248Conference Paper